As chip sizes continue to shrink, high-performance Magnetic Random Access Memory (MRAM) technology has become the mainstream. To advance the development of next-generation MRAM, Industrial Technology Research Institute (ITRI) and University of California, Los Angeles (UCLA) have jointly signed a Voltage Control Magnetic RAM (VC-MRAM) cooperation project. With the support from Taiwan's Department of Industrial Technology (DoIT), Ministry of Economic Affairs (MOEA) and the US Defense Advanced Research Projects Agency (DARPA), this collaboration aims to leverage the technical expertise and innovative capacity from both parties to apply material components to memory chips for computing and storage.